Plasma Technology

In situ spectroscopic ellipsometry (for ALD)


In situ ellipsometry can be used for plasma
as well as for thermal ALD.

download as PDF file (with more data, 750 kB)

The ellipsometer is separated by two valves
from the chamber to reduce deposition on the glass windows.

It is available on the loadlock FlexAL
and the open loaded OpAL.

In situ spectroscopic ellipsometry
(over a large wavelength range)
is very helpful in the characterisation and
optimistaion of new processes/ new precursors
as very many data can be taken even in situ
during a single run, see

Study of the nucleation delay

The thickness of TiN films grown on different thermal SiO2
substrates monitored by in situ spectroscopic ellipsometry
and shown as a function of number of remote plasma ALD
The inset displays the initial growth region in more detail.
Two substrates were prepared by the method of calcination
and preheated at temperatures of 750° and 1.000° C.
The other substrate was an as-received wafer with 410 nm
thermal oxide.


with kind permission
TU Eindhoven
E. Langereis, S.B.S. Heil, M.C.M. van de Sanden, and
W.M.M. Kessels, J. Appl. Phys. 100, 023534 (2006)



Interfacial layer growth

The thickness of a TiN film deposited by plasma-assisted
atomic layer deposition on a H terminated c-Si substrate
shown as a function of the number of remote plasma ALD
The inset shows the model used to analyze the in-situ
ellipsometry data.
The change in thickness of a SiNx interface layer formed
during the ALD process is also given.


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