Study of the nucleation delay
The thickness of TiN films grown on different thermal SiO2
substrates monitored by in situ spectroscopic ellipsometry
and shown as a function of number of remote plasma ALD
The inset displays the initial growth region in more detail.
Two substrates were prepared by the method of calcination
and preheated at temperatures of 750° and 1.000° C.
The other substrate was an as-received wafer with 410 nm
with kind permission
E. Langereis, S.B.S. Heil, M.C.M. van de Sanden, and
W.M.M. Kessels, J. Appl. Phys. 100, 023534 (2006)
Interfacial layer growth
The thickness of a TiN film deposited by plasma-assisted
atomic layer deposition on a H terminated c-Si substrate
shown as a function of the number of remote plasma ALD
The inset shows the model used to analyze the in-situ
The change in thickness of a SiNx interface layer formed
during the ALD process is also given.