Plasma Technology  

anisotropic Al ICP etch with resist intact/ 5 kB

OPT application lab:
anisotropic Al etch with resist intact 


Reactive Ion Etching with ICP source

Plasmalab System 100
with loadlock and ICP380 source

Aluminium ICP Etching

-> optical emission end point detection

ICP sources
ICP 65 for pieces and small wafer
ICP 180 for up to 4" wafers
ICP 380 for up to 8" wafers

Results:
Rate : 0.4 µm/ min
high selectivity to SiO2 underneath
selectivity to photoresist mask > 3 : 1
linewidth loss < 0.05 µm/ side
in passivation / resist strip

anisotropic Al ICP etch/ 6 kB

OPT application lab:
anisotropic Al etch little linewidth loss


Equipment:
Plasmalab System 80 Plus
Plasmalab System 100/ 133 (Cluster)


Technology:
Reactive Ion Etching
with ICP Source (13.56 MHz)
Inductive Coupled Plasma
RF driven substrate electrode
substrate temperature control
HBr, Cl2 based multi step process

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