Plasma Technology  

 

The Si etch uses 2 self limiting process steps:
-exposing the Si surface with a very small
  controlled Cl2 dose
-removing only the SiClx from the surface
  by low energy ion bombardment

The SEMs show very smooth surfaces.
rate: 7 A/ cycle, up to 70 A/ min

Advantages of ALE over conventional dry etching
- excellent depth control for nanoscale etching
- better selectivity to other layers
- very smooth surfaces
- excellent uniformity
- no or less ARDE effect (RIE lag)
- very low crystal damage


 

 

20 nm wide features etched 100 nm deep
(OPT application lab)

 

 

ALE/ ICP schematic

Si ALE Atomic Layer Etching

 

dual chamber cluster: ALE / RIE

 

very smooth bottom

 

The OPT ALE systems include:

Very fast PLC: control time starting at 10 msec
with 1 msec steps
No delay between process steps
process step times reproducible to 1 msec

Dose control with very fast ALD valves

High precision ion energy control in the ALE range
Power damping (auto switch)
ALE requires low, well-controlled DC bias
and the RIE power typically <10W.
The ALE kit includes a low power mode.

helical ICP source
with electrostatic shield

system "fingerprinting" by optical emission (Option)


 

 

 

 

 

 

 

 

The Si etch uses 2 self limiting process steps:
-exposing the Si surface with a very small controlled Cl2 dose
-removing only the SiClx from the surface by low energy ion bombardment

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