Plasma Technology  


OPT application lab:
150 nm AlInSb etch
PR mask intact


ICP schematic



OPT application lab:
150 nm AlInSb etch
PR mask intact

AlInSb ICP etching for IR Detectors


Results:

Typical composition in IR detectors: Al0.4In0.6Sb

Chemistry: Cl based process

Low damage etch conditions

AlInSb etch rate: 130nm/min
(can be much increased)

Selectivity AlInSb: PR  1.4:1
Selectivity AlInSb: SiO2  2.5:1

Profile: Anisotropic

Substrate and sidewall: Smooth and residue free, no trenching


Plasmalab System 100:
dual chamber cluster: ICP / RIE


Technology:

Reactive Ion Etching

with ICP Source (2 or 13.56 MHz)

Inductive Coupled Plasma

13.56 MHz Plasma Excitation

RF driven substrate electrode

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