Plasma Technology  


Courtesy of TU Eindhoven
Using either O2 plasma or O3 gas, Al2O3
can be deposited at room temperature with good material quality.

Al2O3 ALD growth using Ozone

metal precursor: TMA (tri methyl aluminium)

non metal precursor: O3












Why Ozone ?

Ozone is more reactive then H2O,
but not as reactive as O radicals.

Ozone is sometimes preferred anyway,
when O radicals recombine to fast
for high aspect ratios.




ALD schematic
valve between remote ICP source
and chamber,
spectroscopic ellipsometry optional

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