Plasma Technology  


AES analysis conditions:
Sputter rate : 74Å /min, interval : 0.5


± 2 % (thickness) uniformity
over a 200 mm wafer (at 250° C)
refractive index: 1.6435 ± 0.0048 (at 632 nm)


TEM picture of 50 nm Al2O3 (x 100.000)

same picture x 800.000

Al2O3 ALD (thermal only)


precursor: TMA (tri methyl aluminium)

gas: H2O

temperature controlled vapour draw

dose control by fast pulse ALD valve

deposition temperature: 100° - 400° C

cycle time < 3 sec (for 200 mm wafer)
(shorter for smaller substrates, ca 3 sec)

0.9 A/ cycle (saturated dose at 300° C)
18 A/ min, > 100 nm/ hr (for 200 mm wafer)
(faster for smaller substrates)

uniformity: < ± 0.5 - 2 %
(depending on substrate size)
repeatability < ± 1 %

refractive index 1.64

 

growth rate (per cycle) vs water dosing time
at 100° and 200° C substrate table temperature

 

 


FlexAl

 


 

 

 

OpAl

link to homepage email to OPT