Plasma Technology  

Anisotropic eching of 100 nm Cr
The Astrea can etch the Cr and the
SiO2 subsequently in the same process.
(OPT application lab)



500 nm deep very anisotropic SiO2 etch

with loadlock for large substrates
(up to 490 mm diameter
up to 20 mm thick)

Astrea for etching of thick quartz substrates


cluster tool with 4 position for
1000 series process modules
single substrate load/ unload station
vacuum cassette

planar ICP technology

for very large substrates


single chamber system
(shown here in RIE mode only)
with vacumm loadlock

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