Plasma Technology  

3 µm deep Au IBE etch

3 µm deep, anisotropic etch with
photo resist mask / SiO2 still in place

4.5 µm deep Au IBE etch

4.5 µm deep etch with 50° wall anlge
(photo resist mask still in place)

Ionfab 300 Plus

Au Ion Beam Etching (IBE)

Etch Mode: IBE
Rotating substrate with adjustable tilt
Ion Source: 15 cm, 13.56 MHz
Ion Optics: High Uniformity
Neutralisation: filamentfree PBN

Rate : 50 - 200 nm / min
Mask: Photoresist
Selectivity: 1.5 - 5:1
Selectivity to Al or Ti masks: > 20:1
Wall Angle: adjustable 30° - 90°
Uniformity (100 mm): < +/- 5%

rate vs beam energy

Reactive Ion Beam Etching RIBE

1.5 µm deep Au etch with Ti mask

Anisotropic etch through Ti / Au
(courtesy of University of
Kassel, Technische Physik)


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