Plasma Technology  


10 µm deep CMT IBE


HgCdTe (CMT) Ion Beam Etching


ion beam etching
IBE / RIBE/ CAIBE


Technology:

Ion Beam Etching
He substrate cooling
tiltable substrate holder
substrate rotation
RF source (filamentless)
filamentless PBN

Results:
Rate : 160 nm/ min
Mask: Photoresist
Uniformity: + 5%

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