Plasma Technology  


OPT application lab:
8 µm deep CMT etch
PR mask still in place
controllable profile


Inductive Coupled Plasma

Technology:
Inductive Coupled Plasma ICP - RIE
Very efficient substrate cooling

Results:
rate 0.05 to 0.5 µ/ min
very low bias / damage process
selectivity > 10:1 to resist
                 > 20:1 to SiO2 or SiNx
uniformity < +/- 4 % (50mm diameter)
excellent profile control


SEM

3.5 µm deep anisotropic, low damage etch

SEM

4 µm deep anisotropic, low damage etch

HgCdTe (CMT) Low Energy ICP Etching


50 µm wide structures in CMT
Courtesy of SITP China

 



Plasmalab 80 Plus
with cover for the ICP65



Plasmalab System 100:
(cluster with ICP and RIE)

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