Plasma Technology  

110 nm Cr etched at 20 nm/ min
selectivity to Shipley S1800 serie > 1.5 : 1
Courtesy of University of Joensuu
Department of Physics and Mathematics



SEM

500 nm diameter holes
anisotropic etch of 100 nm wide,
150 nm thick Cr lines
ZEP mask still in place
7 nm/ min at 0.5 : 1 to the mask
Courtesy of MPI Halle
Dr Milenin, Dr Jamios



Plasmalab System 133
with vacuum loadlock

Cr Etching


Plasmalab System 100/ 133
Plasmalab 80 Plus

13.56 MHz Plasma Excitation
Chlorine based Process
Parallel Plate Reactor
Shower Head Gas Inlet

Rate: ca 2 - 30 nm/ min
Selectivity to PR: 0.5 - 1.5 : 1
Profile : adjustable
wall angle definition by photoresist erosion

 

RIE layout


SEM

6 µm diameter dots
anisotropic etch of 500 nm Cr
AR-P 351 mask still in place
12 nm/ min at 1: 1.2 to the mask
Courtesy of MPI Halle, Dr Milenin and Dr Jamois

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