Plasma Technology  

residue free Cu etch

OPT application lab:
residue free Cu etch

Reactive Ion Etching

Plasmalab System 100
with loadlock, RIE mode

Cu Etching (RIE) for Failure Analysis


Plasmalab 80 Plus
Plasmalab System 100
(configured for Cu RIE)


Parallel Plate Reactor
Shower Head Gas inlet
Chlorine based process


rate : 300 nm/min (chip)

uniformity: +  5% (200 mm wafer)

residue free etch

selectivity to SiO2  >  10 : 1

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