Plasma Technology  

residue free Cu etch

OPT application lab:
residue free Cu etch


Reactive Ion Etching


Plasmalab System 100
with loadlock, RIE mode

Cu Etching (RIE) for Failure Analysis


Equipment:

Plasmalab 80 Plus
Plasmalab System 100
(configured for Cu RIE)

Technology:

Parallel Plate Reactor
Shower Head Gas inlet
Chlorine based process


Results:

rate : 300 nm/min (chip)

uniformity: +  5% (200 mm wafer)

residue free etch

selectivity to SiO2  >  10 : 1

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