Plasma Technology  

OPT application lab:
DLC deposition in a parallel plate system

excellent passivation for high voltage devices
due to its high breakdown voltage (> 1.750 Volt for 120 nm),
low leakage and hard surface properties

 


Plasmalab NGP 80


HR-TEM picture, 200kV, elastically filtered
taken by TU Chemnitz, showing the interface
of a 200 nm amoprhous DLC film deposited
on a Si wafer at the OPT application lab

DLC PECVD


Cassette to Cassette Cluster System
for Production (passivating power devices)


Parallel Plate Reactor


DLC stands for "diamond like carbon".
It is used as a protective coating and for
very high quality electrical passivations layers.

-  good adhesion on Si, polymers, SiO2
-  rate: 15 - 50 nm/ min
-  uniformity per wafer: 3/ 5 % (4/ 6")
-  low deposition temperature
-  refractive index 2.4
-  high electrical breakdown field
-  dielectric constant approx. 8
-  semiconducting devices become radiation hard
-  doping with nitrogen or boron possible
-  thermal conductivity variable, up to 700W/m-K

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