Plasma Technology  


Prof Sherif Sedky uses his Plasmalab System 100 for
etching Si using an SF6/ O2 process at low temperature.
He has chosen Oxfords wide temperature range substrate
electrode (- 150° C - + 400° C) and Helium backside
cooling to establish an excellent thermal contact.

The advantages of the low temperature etching are the
high rates combined with high selectivities and smooth
walls as the process does not use a polymer formation
step to achieve the excellent anisotropy.

with kind permission of:
  American University of Cairo
  Prof Sherif Sedky


ICP technology


Plasmalab System 100
with ICP source and loadlock

400 µm deep Si etching by cryo technology



400 µm deep hole in Si


400 µm deep holes
with very smooth walls


200 µm deep anisotropic etch:
"aspect ratio" for the spacing 40 : 1




free standing lines


The low temperature process
is able to produce walls
at negative angles.

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