Plasma Technology  


OPT application lab:
2 µm Si waveguides 10 µm deep Si waveguides
1550 nm signal processing
Extremely smooth and clean anisotropic etch
Si etch rate 2-3 µm/min
Si : SiO2 mask >200:1
(PR also possible >100:1)

Plasmalab System 100
with ICP180 and loadlock

 


OPT application lab:
Cryo etched 50nm feature
Roughness < 10 nm
Shallow etches controllable




ICP technology

The profile can easily be
adjusted by the temperature !

SEM

with kind permission
of TU Twente

Deep Si Etching by Cryo ICP


SEM

via hole
with kind permission
of TU Twente

 

SEM

perfectly anisotropic etch
with kind permission
of TU Twente

 

OPT Application lab:
cryo etch profile control

 

OPTs wide temperature range
substrate electrode allows to etch
at any temperature between
- 150° c and + 400° C !


Deep Etching of Large Si MEMS Structures:
Advantages of Cryogenic Etch

Wide range of profile control (80° to 92°)
  by simple process variation
High aspect ratio for deep etches
  including through wafer
Smooth profiles (no scallop roughening like Bosch)
High rate (up to 5 µm/min)
Good uniformity (<±3 % achievable on 200 mm wafers)
Very high selectivity over photoresist (to 100:1)
  and SiO2 masks (to 200:1)
Simple and extremely clean plasma chemistry:
  SF6-O2 (no fluorocarbons)
almost no chamber cleaning

Nanoscale Etching in Silicon:
Advantages of Cryogenic Etch

Wide range of profile control (80° to 92°)
  by simple process variation
High aspect ratio for nanoscale etches
Very fine features < 50 nm lines and gaps
Smooth profiles (no scallop roughening like Bosch)
Notch-free etching achievable
Good rate (up to to 0.5 µm/min)
Good uniformity (<±3% achievable on 200 mm wafers)
High selectivity over photoresist (to 10:1)
  and SiO2 masks (to 20:1)
Simple and extremely clean plasma chemistry:
  SF6-O2 (no fluorocarbons)
almost no chamber cleaning


 

 

 

 

 

 

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