Plasma Technology  

 

OPT application lab
sloped 120 µm deep hole by
advanced Bosch process sequence

 

OPT application lab
sloped deep Si etch with mask undercut

OPT application lab
45 µm deep hole by the cryo DSE process
wall angle 85°

 

 

top view:
85° achieved on a 200 mm wafer
(80° achieved on pieces)

Deep Si Etching of sloped holes

link to homepage email to OPT

OPT application lab
50 µm via hole at 72° degrees slope (top)

OPT application lab
50 µm via hole with tuned slope

isotropic etch

 


PlasmaPro Estrelas
with ICP and loadlock

PlasmaPro 100
with ICP and loadlock

 

 

 

 


 

ICP technology