Plasma Technology  

The Plasmalab 80 Plus PECVD system is used for depositing SiO2 – SiON waveguide films.
The Plasmalab 80 Plus etching system is used for anisotropic etching of such films in RIE mode, while the ICP mode is preferred for Si deep etching with shaped walls.

with kind permission of:
Optolink Zelenograd
Kuzmin Sergay


PECVD


Plasmalab 80Plus


ICP - RIE

SiO2 PECVD and Si ICP RIE for DWDM


80 µm deep Si etching (ICP65)
The etch groove shape is smooth and adapted for inserting fibers into DWDM chips.
low temperature process at - 110°C
etch rate: 5 µm/ min
selectivity Si/SiO2 55 : 1
uniformity: +/- 4 % across wafer


50 µm deep Si etching (ICP65)

Variant of coupling groove with strictly vertical walls


The waveguide structure:
lower cladding 5 µm SiO2
core SiON: d=2.5 µm
RI difference 1.5 %
upper cladding 5 µm SiO2
deposition rate: 70 nm/min
RI uniformity: <+/- 0.05 % (measured applying prism coupling)
thickness uniformity: <+/-1.0 %


Infrared camera images of 8-channel DWDM outputs
Crosstalks: –10dB

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