Plasma Technology  


1 µm 3D nanoshaped Si pillars

 

with kind permission of
TU Twente, Mesa Plus

 



PlasmaPro Estrelas
with ICP and loadlock

 

The process can be optimised for:
etch rate > 25 µm/ min (10 % open area)
selectivity to PR mask > 250 : 1
selectivity to SiO2 mask > 500 : 1
aspect ratio > 70 : 1
scallop size < 10 nm
notching < 10 nm (SOI kit)
uniformity < +/- 3 % (200 mm wafer)


high aspect ratio vertical
etch, 114 µm deep
with very smooth sidewalls

Estrelas for 3D modulated nano pillar Si etching

link to homepage email to OPT

deep Si etching with controlled
single large scallops

 

 

small scallops recipie
for different aspect ratios next to each other

 

ICP technology