Plasma Technology  

SEM

Courtesy of Infineon Munich:
0.2 µm Cu technology: M1 - M4 etched


Reactive Ion Etching

Plasmalab 80 Plus
with laser interferometer

Failure Analysis with Cu metalisation, Si3N4 and SiO2 RIE etching


Equipment:

Plasmalab 80 Plus for chips and up to 200 mm wafer
Plasmalab 800 Plus for chips and up to 300 mm wafer
Plasmalab System 100/ 133

Technology:
Parallel Plate Reactor
Shower Head Gas inlet
Fluorine based process


Results:

rate : ca 40 nm/min (chip)
residue free etch

Good uniformities over 200/ 300 mm wafers can be achieved.

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