Plasma Technology  

cleaved laser facet


Ionfab 300 Plus


cleaved laser facet

CAIBE of cleaved laser facets in GaAs/ AlGaAs


chemically assisted
ion beam etching CAIBE


The SEM's (OPT application lab) show
ca. 5 µm deep etch under different
angles (without substrate rotation).
Photoresist Mask intact (not removed)

System: Ionfab 300 Plus

Results:
Rate: 10 - 500 nm/ min
Mask: Photoresist (over SiO2)
Wall Angle: adjustable
Surface: very smooth


5 µm deep anisotropic etch
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