GaAs Etching

 

RIE

Chlorine based process

etch rates: 10 nm/ min - >1 Ám/ min

high selectivity to AlGaAs by F addition

low selectivity for heterostructures

GaAs/ AlGaAs heterostructure RIE

Courtesy of Siemens
3 Ám deep anisotropic GaAs/ AlGaAs RIE

100 Ám deep GaAs via hole

OPT Application lab:
100 Ám deep GaAs RIE at 1 Ám/ min


ICP - RIE

Chlorine based process

etch rates: 10 nm/ min -  >3 Ám/ min

low damage by low ion energies

anisotropic etch though heterostructures

20 Ám deep anisotropic ICP GaAs etch

OPT Application lab:
50 Ám deep GaAs via hole

5 Ám deep heterostruture ICP etch

OPT Application lab:
5 Ám deep GaAs/ AlGaAs ICP etch


CAIBE

Ar or Ar/ Cl2 through the RF source

etch rates: 10 nm/ min - 300nm/min

anisotropic etch though heterostructures

mirror quality

GaAs/ ALGaAs Heterostucrue CAIBE, wall angle 45░

OPT Application lab:
Heterostructure CAIBE at 45░ angle

GaAs RIBE at low microdivergence

Courtesy of Sandia:
1.2 Ám deep GaAs RIBE

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