Plasma Technology  


10 µm deep anisotropic GaAs/ Etch/ 9 kB

OPT application lab: DBR Heterostuctures
10 µm deep anisotropic GaAs Etch


10 µm deep anisotropic GaAs/ Etch/ 9 kB

OPT application lab: DBR Heterostuctures
10 µm deep anisotropic GaAs Etch

Plasmalab System 100 with ICP180 source and vacuum loadlock/ 6 kB

Plasmalab System 100
with ICP180 source

GaAs ICP Etching


15 µm deep anisotropic GaAs Etch/ 7 kB

OPT application lab:
sloped wall 10 µm deep
GaAs Etch


ICP RIE schematic/ 8 kB

 

rate GaAs up to 2 µm/ min

selectivity to PR Mask 30 - >100 : 1,
to SiO2 50 - >200 : 1

low bias process or low substrate damage

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