Plasma Technology  


SEM

with controlled ion bombardment


Inductive Coupled Remote Plasma


SEM

without ion bombardment

GaAs Surface Roughening / Modification


Technology:
Remote Downstream Plasma*
Source Power => Plasma Density
RF Power => Ion Energy
*original work by DSMW

Results:
Rate : 0.2 - 5 µm / min
Crystallographic etching without
ion bombardment
Increasing roughness with
increasing ion bombardment


Plasmalab 80 Plus
with cover for the ICP65


Plasmalab System 100:
(cluster with ICP and RIE)

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