Plasma Technology  

The Ionfab 300 installed at Sandia is used for chemically assisted ion beam etching (CAIBE) and reactive ion beam etching (RIBE) of  GaAs.

with kind permission of:
  Sandia USA 


1 µm deep GaAs etch at low microdivergence


Ionfab 300 Plus

GaAs RIBE / CAIBE: Microdivergence of the Cl beam


IBE/ RIBE/ CAIBE technoloy


divergence vs beam current at varying Uacc/ Ubeam

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