OPT application lab:Vertical etched profile (with PR mask)
OPT application lab:
3 µm deep anisotropic etch with
- no "trenching"
- no "foot"
OPT application lab:PR mask was taken off by Acetone
ICP - RIE
Cl based process
PR mask hard baked
Etch rate > 0.25 µm/min (total)
Uniformity < ± 4 % on 2” wafer
Selectivity > 8:1 to PR mask (total)
Profile control: vertical > 80°
Inductive Coupled Remote Plasma
Plasmalab 80 Pluswith cover for the ICP65
Plasmalab System 100:(cluster with ICP and RIE)