Plasma Technology  

GaAs/GaInP/AlInGaP ICP etch

OPT application lab:
Vertical etched profile (with PR mask)


GaAs/GaInP/AlInGaP ICP etch

OPT application lab:
3 µm deep anisotropic etch with
- no "trenching"
- no "foot"


GaAs/GaInP/AlInGaP ICP etch

OPT application lab:
PR mask was taken off by Acetone

GaAs/GaInP/AlInGaP Waveguide Etch


Technology:
ICP - RIE
Cl based process

PR mask hard baked

Results:
Etch rate > 0.25 µm/min (total)
Uniformity < ± 4 % on 2 wafer
Selectivity > 8:1 to PR mask (total)
Profile control: vertical > 80°

Inductive Coupled Remote Plasma


Plasmalab 80 Plus
with cover for the ICP65


Plasmalab System 100:
(cluster with ICP and RIE)

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