Plasma Technology  


GaAs photonic crysta,

Courtesy of NCTU:
top view of the 280 nm diameter holes
330 nm high, angle 90.6 °


ICP technology

GaAs/ AlGaAs Photonic Crystal ICP Etching


Plasmalab System 100
with ICP 380 source


GaAs/ AlGas etch rate 130 nm/ min

selectivity to SiN 6: 1

highly anisotropic profile

uniform etch

 

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