Plasma Technology  

GaAs photonic crysta,

Courtesy of NCTU:
top view of the 280 nm diameter holes
330 nm high, angle 90.6 °

ICP technology

GaAs/ AlGaAs Photonic Crystal ICP Etching

Plasmalab System 100
with ICP 380 source

GaAs/ AlGas etch rate 130 nm/ min

selectivity to SiN 6: 1

highly anisotropic profile

uniform etch


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