Plasma Technology  

Laser Interferometry signal trace


dual chamber Plasmalab System 100 with ICP and PECVD

Plasmalab System 100
dual chamber with
ICP etching and PECVD

GaAs/ AlGaAs DBR ICP Etching using Laser Interferometry


SEM: GaAs/ AlGaAs etch

Chlorine based Process
Rate : > 0.3 µm/min
Selectivity to SiO2 > 10:1, to resist > 5:1
good uniformity
anisotropic profile
smooth sidewalls
clean etch surface


ICP technology/ 6 kB

Reactive Ion Etching with
Inductive Coupled Plasma Source (ICP)


DBR heterosctructure etch

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