Plasma Technology  

SEM

SEM

2 µm deep etch with mask not removed (CH4)

RIE layout


SEM

2 µm deep etch with mask not removed (SiCl4)

GaInP - Reactive Ion Etching (RIE)


Plasmalab System 133
with loadlock

Plasmalab 80 Plus
with Glove box


Plasmalab 80 Plus
Plasmalab System 100/ 133

Technology:
Parallel Plate Configuration
RIE-Mode (13.56 MHz)
Shower Head Gas Inlet

Results:
Rate : ca. 8 (CH4) - 30 (SiCl4) nm/ min
Mask: Photoresist or SiO2
60° - 87° walls (depending on mask)
smoother with CH4 (mask dependent)

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