Plasma Technology  

TU Eindoven uses its Plasmalab System 100 RIE  System for Chlorine based III/ V etch processes.


COBRA Inter-University Research Institute
  on Communication Technology
  Eindhoven University of Technology
  Department of Electrical Engineering
  Contact: Dr F Karouta

RIE technology

Plasmalab System 100

GaN RIE Etching

rate vs bias

1 µm deep, anisotropic GaN etch

rate vs pressure


1 µm deep, anisotropic GaN RIE

rate: 50 - 150 nm/ min

selectivity to PECVD SiN > 5 : 1

process gases: SiCl4, SF6, Ar

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