Plasma Technology  

SEM

85 µm deep anisotropic ICP etch


ICP Technology


Plasmalab System 100
with ICP380

Deep GaP ICP Etching


SEM

80 µm deep etch


Technology:

Reactive Ion Etching
with ICP Source (2 or 13 MHz)
Inductive Coupled Plasma 
RF driven substrate electrode

Results:
Rate : 2.6 µm/ min
good uniformity
selectivity to PR > 12 : 1
selectivity to SiO2 mask 120 : 1


Dr Lamontagne uses his Plasmalab System 100
for processing of III-V semiconductors. 
It is equipped with an ICP 180 source.

 

with kind permission of:
  National Research Council, Ottawa
  Institute for Microstructural Sciences
  Dr Boris Lamontagne 

link to homepage email to OPT