Plasma Technology  


85 µm deep anisotropic ICP etch

ICP Technology

Plasmalab System 100
with ICP380

Deep GaP ICP Etching


80 µm deep etch


Reactive Ion Etching
with ICP Source (2 or 13 MHz)
Inductive Coupled Plasma 
RF driven substrate electrode

Rate : 2.6 µm/ min
good uniformity
selectivity to PR > 12 : 1
selectivity to SiO2 mask 120 : 1

Dr Lamontagne uses his Plasmalab System 100
for processing of III-V semiconductors. 
It is equipped with an ICP 180 source.


with kind permission of:
  National Research Council, Ottawa
  Institute for Microstructural Sciences
  Dr Boris Lamontagne 

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