Plasma Technology  


OPT application lab:
7 µm deep GaSb etch

Plasmalab System 100
ICP180 source
cassette handling

GaSb ICP Etching

Reactive Ion Etching
with ICP Source (2 or 13 MHz)
Inductive Coupled Plasma
RF driven substrate electrode

Rate : 2 µm/ min
selectivity to SiO2 mask 25 : 1
good uniformity
smooth surface
anisotropic profile

ICP technology

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