Plasma Technology  

SEM

OPT application lab:
7 µm deep GaSb etch


Plasmalab System 100
ICP180 source
cassette handling

GaSb ICP Etching


Technology:
Reactive Ion Etching
with ICP Source (2 or 13 MHz)
Inductive Coupled Plasma
RF driven substrate electrode

Results:
Rate : 2 µm/ min
selectivity to SiO2 mask 25 : 1
good uniformity
smooth surface
anisotropic profile


ICP technology

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