Plasma Technology  

AES depth profiling of of GdN
deposited with N plasma
(capped with TaN to prevent
post-growth oxidation)



ALD schematic
valve between remote ICP source
and chamber,
spectroscopic ellipsometry optional

Growth rate as a function of deposition
temperature with and without
nitrogen plasma exposure

GdN ALD (radical assisted by remote plasma)


GdN is a ferromagnetic, conducting material with applications in Spintronic devices.

Deposition on an OpAL with
Gd(MeCp)3
and N2 plasma

No defined ALD window

with kind permission of
Dr Richard Potter
University of Liverpool

Fang et al, Journal of Crystal Growth 338 (2012)
p 111–117

 

 

 


OpAl

Why remote plasma ALD ?

A "remote plasma" makes sure, the substrates
are NOT in contact with the plasma !

The remote plasma just cracks molecules,
so that very reactive species can be used for
the growth process.

Such reactive species often enable a very
efficient plasma preclean/ conditioning of the
substrates, lead to cleaner films and lower
the deposition temperature.

In Oxford systems it is possible to run
ALD processes using
- the thermal only method
- ozone assisted processes
- remote plasma assisted processes
together without any hardware change.
Multiple step processes using all technologies
can be chosen from the software.

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