High-k material with 50x reduction in gate leakage
current compared to SiO
Deposition on an OpAL with Gd(iPrCp)3
and O2 plasma
No defined ALD window –
although there appears to be a small plateau at 250 ºC
Growth Rate 1.4 Å/cycle and R.I. of 1.80
Dielectric constant of ~16
Reduction in Equivalent Oxide Thickness
compared to SiO2
Why remote plasma ALD ?
A "remote plasma" makes sure, the substrates
are NOT in contact with the plasma !
The remote plasma just cracks molecules,
so that very reactive species can be used for
the growth process.
Such reactive species often enable
efficient plasma preclean/ conditioning of the
substrates, lead to cleaner films and lower
the deposition temperature.
In Oxford systems it is possible to
ALD processes using
- the thermal only method
- ozone assisted processes
- remote plasma assisted processes
together without any hardware change.
Multiple step processes using all technologies
can be chosen from the software.