Plasma Technology  

Plasmalab System 100
ICP- RIE, with loadlock



OPT application lab:
GST depth 0.2µm. Profile 74°
(would be steeper with steep PR mask)


OPT application lab:
GST depth 0.2µm. Profile 74°
(would be steeper with steep PR mask)

GST Dry Etching (Germanium Antimony Telluride )


Reactive Ion Etching
with ICP Source (13.56 MHz)
Inductive Coupled Plasma
13.56 MHz Plasma Excitation
RF driven substrate ectrode
Cl based process

Etch rate                        150nm/min
Selectivity PR mask       > 2:1
Selectivity SiO2              > 3:1
Profile:                           anisotropic


ICP schematic

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