Plasma Technology  

Pairs of InP/InGaAsP layers/ InP/ pairs of
InGaAsP/InP with hard baked PR mask intact

RIE layout

DBR stack of (AlGa)InAs/(Al.Ga).InAs
on InP with SiO2 mask

III/ V Heterostructure RIE Etching

Plasmalab System 133
with loadlock

Plasmalab 80 Plus
with Glove box

Parallel Plate Configuration
RIE-Mode (13.56 MHz)
Shower Head Gas Inlet
Cl based process

Rate : 60 - 90 nm/ min
anisotropic profile
good uniformity
Mask: Photoresist (hard baked, UV cured) or SiO2

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