Plasma Technology  


AES analysis



ALD schematic
valve between remote ICP source
and chamber,
spectroscopic ellipsometry optional



FlexAl

HfN ALD (radical assisted by remote plasma)


precursor: TEMAH

TEMAH molecule
tetrakis ethylmethylamino hafnium
TEMAH is heated to 70° C and used in
"bubbling mode".

non metal precursor: NH3 or N2/ H2

dose control by fast pulse ALD valve

0.9 A/ cycle


OpAl

Why remote plasma ALD ?

A "remote plasma" makes sure, the substrates
are NOT in contact with the plasma !

The remote plasma just cracks molecules,
so that very reactive species can be used for
the growth process.

Such reactive species often enable a very
efficient plasma preclean/ conditioning of the
substrates, lead to cleaner films and lower
the deposition temperature.

In Oxford systems it is possible to run
ALD processes using
- the thermal only method
- ozone assisted processes
- remote plasma assisted processes
together without any hardware change.
Multiple step processes using all technologies
can be chosen from the software.

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