tetrakis ethylmethylamino hafnium
TEMAH is heated to 70° C and used in
non metal precursor: NH3 or N2/ H2
dose control by fast pulse ALD valve
0.9 A/ cycle
Why remote plasma ALD ?
A "remote plasma" makes sure, the substrates
are NOT in contact with the plasma !
The remote plasma just cracks molecules,
so that very reactive species can be used for
the growth process.
Such reactive species often enable a very
efficient plasma preclean/ conditioning of the
substrates, lead to cleaner films and lower
the deposition temperature.
In Oxford systems it is possible to
ALD processes using
- the thermal only method
- ozone assisted processes
- remote plasma assisted processes
together without any hardware change.
Multiple step processes using all technologies
can be chosen from the software.