Plasma Technology  


thermal ALD at 290° C:
Sputtered Auger analysis showing C < 3 at %

precursor: TEMAH (bubbled) + H2O
H2O by temperature controlled vapor draw

dose control by fast pulse ALD valve

deposition temperature: 200° - 290° C

cycle time < 5 sec, 0.8 A/ cycle (saturated dose)
for 200 mm wafer (shorter for smaller substrates)

10 A/ min, > 60 nm/ hr (for 200 mm wafer)
(faster for smaller substrates)

refractive index: 2.00 - 2.05

Hf:O 1 : 2.1

uniformity: ± 3 % (200 mm)


Leakage current densities
< 1x10-9 A/cm2 @ 2.5 MV/cm for annealed layers
> 1x10-7 A/cm2 @ 2.5 MV/cm for unannealed layers
Breakdown electric field strength is greater
than or equal to 3MV/cm
Accumulation capacitance yields
estimated k values of 17-18

with kind permission
Queens university Belfast, Northern Ireland
Semiconductor Research Centre

HfO2 ALD (thermal only)


OpAl


H2O thermal saturation at 0.75 Å/cycle

 


FlexAl

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