Plasma Technology  

Ionfab 300 Plus

The deposition rate and uniformity depend
on the grid set, target size and on the
power level of the source.

OPT offers a variety of grid sets for different needs.

see also: DWDM source

The data shown here are taken from a
600 W RF source with a 12 cm elliptical
grid set and 8" targets.

Substrate temperature: ca 60° C

 


Ion Beam Deposition

Ion Beam Deposition (Ionfab 300 Plus): SiO2, Ta2O5, Al2O3

High Uniformity Al2O3
rate > 5 nm/ min*
uniformity < +/- 1 % (4"), < +/- 2.5 % (6")
refractive index: 1.670 +/- 0.0025
stress: 400 - 500 MPa compressive

High Uniformity Ta2O5
rate > 6nm/ min
uniformity < +/- 2 % (6")
refractive index: 2.116 +/- 0.005
stress: compressive

High RateAl2O3
rate > 6.6nm/ min*
uniformity < +/- 5% (4")
refractive index: 1.670 +/- 0.0025
stress: 400 - 500 MPa compressive

* from an Al2O3 target
Much higher rates can be achieved by
reactive sputtering from a metal target !

High Uniformity SiO2
rate > 5.5 nm/ min
uniformity < +/- 2 % (6")
refractive index: 1.487 +/- 0.001
stress: compressive

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