Plasma Technology  

Ionfab 300 Plus


Ion Beam Deposition
from a Cr metal target

Ion Beam Deposition of Cr

 

Deposition rate > 10 nm/ min

Thickness Uniformity < ± 1 % over a 6-inch
clamped wafer, 5mm edge exclusion

Resistivity ~ 35 µohm cm

Run-to-run uniformity < 0.1 %

Target life > 1000 hours

The platen arm angle can be varied to give
improved step-coverage at the expense of rate,
or higher rate at the expense of uniformity.
Other parameters may be varied to achieve
rates up to 18 nm/ min, or resistivity as low
as 25 µohm cm.


Cr IBS uniformity

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