Plasma Technology  

Ionfab 300 Plus


Ion Beam Deposition
from a Va metal target
with O2 assist

Ion Beam Deposition of VaO(5-x)

 

Deposition rate: up to 6 nm/ min
The deposition rate used will depend on
electrical properties requirements of the
deposited films. For the highest quality a
lower rate is usually used.

Deposition Uniformity: <± 2 % over 8

Resistivity : 0.1 to over 3 Ohm cm
i.e. sheet resistance of 10-300 KOhm/cm2
(for a 100 nm film)

Resistance uniformity: ± 3 %

 

DOWNLOAD POSTER (2016)

 

Zero porosity SiO2 capping layer:

Deposition rate: > 5 nm/min

Deposition uniformity: <± 2 % over 8

Refractive index: 1.4868 (632.8nm), 1.4738 (1550nm)

Film Stress: < 300 MPa Compressive

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