Plasma Technology  

Ionfab 300 Plus


Ion Beam Deposition
from either an Al metal
or an Al2O3 compound target
with O2 assist

Ion Beam Deposition of Al2O3


Ionfab 300 Plus

High RateAl2O3 Proccess
rate > 6.6nm/ min*
uniformity < +/- 5% (4")
refractive index: 1.670 +/- 0.0025
stress: 400 - 500 MPa compressive
substrate temperature < 60° C without cooling

High Uniformity Al2O3 Process
rate > 5 nm/ min*
uniformity < +/- 1 % (4"), < +/- 2.5 % (6")
refractive index: 1.670 +/- 0.0025
stress: 400 - 500 MPa compressive
substrate temperature < 60° C without cooling

* from an Al2O3 target
Much higher rates can be achieved by
reactive sputtering from a metal target !

 

 


Optofab 3000
= Ionfab 300 Plus modified to achieve very high rates
at excellent uniformities over small substrates

Al2O3 IBS uniformity

thickness vs radius in the Optofab 3000

High Rate Process with Al target
Deposition rate: > 22nm/ min
Uniformity: <± 0.5 % over 75 mm thick annulus
< ± 0.3 % over 30 mm thick annulus
centred at 75 mm substrate radius
Refractive index: 1.6781 (632.8nm)
Film Stress: < 330 MPa compressive

High Rate Process with Al2O3 target
Deposition rate: > 16 nm/ min
Uniformity: <± 0.5 % over 75 mm thick annulus
< ± 0.3 % over 30 mm thick annulus
centred at 75 mm substrate radius
Refractive index: 1.6709 (632.8nm)
Film Stress: < 360 MPa compressive

Low Rate Process with Al target
Deposition rate: > 10 nm/ min
Uniformity: <± 0.5 % over 75 mm thick annulus
< ± 0.3 % over 30 mm thick annulus
centred at 75 mm substrate radius
Refractive index: 1.6801 (632.8nm)
Film Stress: < 310 MPa compressive

Low Rate Process with Al2O3 target
Deposition rate: > 9 nm/ min
Uniformity: <± 0.5 % over 75 mm thick annulus
< ± 0.3 % over 30 mm thick annulus
centred at 75 mm substrate radius
Refractive index: 1.6771 (632.8nm)
Film Stress: < 330 MPa compressive

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