Plasma Technology  


OPT application lab:
5.5 µm deep InAs/ AlSb etch, Cl2 based

ICP schematic


OPT application lab:
4.5 µm deep InAs/ AlSb etch, SiCl4 based

InAs/ AlSb ICP Etching


Rate : 0.7 - 0.9 µm/ min

selectivity to SiO2 mask 6 - 12 : 1

good uniformity

smooth surface

Plasmalab System 100:
dual chamber cluster: ICP / RIE


Reactive Ion Etching

with ICP Source (2 or 13.56 MHz)

Inductive Coupled Plasma

13.56 MHz Plasma Excitation

Process chemistry: Cl based

RF driven substrate electrode

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