Dr Lamontagne uses his Ionfab 300 for
CAIBE processing of III-V semiconductors.
It is equipped with a filamentless 15 cm RF
source and a filamentless Plasma Bridge
The photo shows the Ionfab 300 Plus,
which has replaced the Ionfab 300.
with kind permission of*:
National Research Council, Ottawa
Institute for Microstructural Sciences
Dr Boris Lamontagne
SEM picture of a layer grown on the
patterned substrate showing
the (111) B facets: These were
measured to be atomically flat by AFM.
SEM image of the patterned
substrate before growth:
The etched ridge is in the