InP Etching

 

RIE

process gases: CH4/H2

etch rates: 50  - 100 nm/ min

higher rates by Cl addition possible

mask: Photoresist or SiO2

aspect ratio > 5 : 1

InP RIE for DFB Laser

OPT Application lab
InP RIE: 0.2 µm width for DFB Laser

InP Lens RIE/

OPT Application lab
80 µm diameter InP Lens


ICP - RIE

Chlorine based processes

etch rates: 50 nm/ min - 1.5 µm/ min

low damage by low ion energies

selectivity to SiO2:10 - 25 : 1

selectivity to PR: > 500 : 1 possible

Anisotropic InP ICP etching

OPT Application lab
Anisotropic InP ICP Etch

5 µm deep, anisotropic ICP Etch

OPT Application lab
Anisotropic InP ICP Etch


RIBE/ CAIBE

Chlorine and CH4/H2 based process

etch rates: up to 300 nm/ min

adjustable wall angle

mask: Photoresist (SEM) or SiO2

CAIBE or RIBE possible with RF sources

InP RIBE Etch: CH4/Cl2

OPT Application lab
Anisotropic InP RIBE

InP/ InGaAsP/ InP CAIBE

Courtesy of NRC Canada
5 µm deep InP/ InGaAsP/ InP CAIBE

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