Plasma Technology  

SEM

OPT application lab:
10 µm deep anisotropic etch through
InP/ InGaAsP/ InP Heterostructure


ICP - RIE schematic


SEM

OPT application lab:
anisotropic etch with smooth walls


Chlorine based process: Cl2, CH4, H2, Ar

rate > 1.5 µ/ min

selectivity > 15:1 to SiO2 or SiNx mask

uniformity < +/- 4 % (50 mm diameter)

excellent profile control


Plasmalab System 100
with loadlock and ICP180 source


SEM

trace from complex multi-layer of InP related materials by laser interferometry

InP/ InGaAsP Laser Facet ICP Etching


SEM

OPT application lab:
6 µm deep etch in InP/ InGaAsP


SEM

OPT application lab:
6 µm deep waveguide in InP/ InGaAsP


SEM

OPT application lab :
8 µm deep HBr based InP etch
with PR mask



Chlorine based process: Cl2, N2

rate > 1 µ/ min

selectivity > 10:1 to SiO2 or SiNx mask

uniformity < +/- 4 % (50 mm diameter)

excellent profile control


System 100 cassette cluster

 

HBr based process

rate > 0.85 µ/ min

selectivity to SiO2 mask > 10:1

selectivity to PR mask > 10 : 1

uniformity < +/- 4 % (50 mm diameter)

good profile control

link to homepage email to OPT