Plasma Technology  


SEM

OPT application lab:
10 µm deep anisotropic etch


Inductive Coupled Plasma Etching


Plasmalab System 100
with ICP180 source and loadlock

InP ICP RIE


SEM

OPT application lab:
2 µm deep anisotropic CH4/ H2 based etch with photoresist intact


SEM

OPT application lab:
3 µm deep InP Etch with
SiO2 mask


CH4/H2/ Cl2 based process (top SEM)
high rate up to > 1 µm/ min
selectivity to SiO2 mask  10 - 25 : 1

Cl2 free process (bottom SEM's)
rate 200 nm/ min
selectivity to photoresist mask  > 10 : 1
1 : 1 selectivity to InGaAs or InGaAsP
(Selectivities up to 500 : 1 have been achieved
at 50 nm/ min, but this process regime is not
recommended due to heavy polymer formation
and rough sidewalls.)


SEM

Courtesy of Siemens Munich (Dr Franz):
15 µm deep anisotropic InP etch
Al2O3mask intact
original work by ECR


SEM

Courtesy of Siemens Munich (Dr Franz):
8 µm deep anisotropic InP etch
Al2O3mask intact
original work by ECR

 
link to homepage email to OPT