Plasma Technology  


OPT application lab:
1.4 µm deep etch with 80° wall
(PR mask, no clamping)


Inductive Coupled
Plasma Etching


Plasmalab System 100
with ICP source and loadlock

InP ICP Etching by CH4/H2

 


OPT application lab:
1.4 µm deep etch
with photoresist intact

 


OPT application lab:
5 µm deep InP Etch


CH4/H2 based process

> 100 nm/min etch rate
> 5:1 to PR selectivity
> 80° wall angle
no wafer clamping/ glueing
batch process possible (3 x 3")
production suitable process

 

with kind permission of
the FhG HHI Berlin


 


 

 
link to homepage email to OPT