Plasma Technology  

SEM

Cl based processes

ICP - RIE with
Inductive Coupled Plasma Source

Rate 150 nm/ min


ICP technology


SEM

etch stopped at 90 %
of the total etch time


Selectivity controllable from
0.9 - 1.1 : 1

uniform process

smooth surface for low signal attenuation:
surface roughness < 10 nm (for ICP)


Plasmalab System 100
with ICP source

InP Lens etching by RIE or ICP


SEM


Parallel Plate Configuration
RIE-Mode (13.56 MHz)

Rate 50 nm/ min


link to the general RIE technology page

RIE technology


SEM


Selectivity controllable from
1.5 to 2.5

uniform process


Plasmalab System 100
with vacuum loadlock

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