Plasma Technology  

Dr Lamontagne uses his Ionfab 300 for CAIBE
processing of III-V semiconductors.
It is equipped with a filamentless 15 cm RF
source and a filamentless Plasma Bridge
Neutraliser (PBN).

The photo shows the Ionfab 300 Plus ,
which has replaced the Ionfab 300.

with kind permission of:
  National Research Council, Ottawa
  Institute for Microstructural Sciences
  Dr Boris Lamontagne


Ionfab 300 Plis


InP CAIBE

5 µm (max 15 µm) deep etch
at up to 30 : 1 selectivity
to the SiO2 mask
aspect ratio up to 10 : 1

InP/ InGaAsP/ InP CAIBE


chemically assisted ion beam etching


5 µm deep CAIBE

applications:
wavelength demultiplexer,
low loss single- and multi- mode
turning mirrors (0.3 dB per mirror)


turning mirror etched in InP by CAIBE

turning mirror etched
in InP by CAIBE

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