Plasma Technology  

high aspect ratio InP etch
high temperature Cl2 process
depth 3.5 micron
diameter 0.27 micron
200nm InP / 400nm InGaAsP
/ InP-Wafer
etch rate 1.75 micron/ min


Plasmalab System 100
ICP- RIE, with loadlock

Photonic crystal-to-ridge
waveguide taper


high aspect ratio InP etch
high temperature Cl2 process
depth 2.9 micron, diameter 0.18 micron
200nm InP / 400nm InGaAsP / InP-Wafer
etch rate 1.75 micron/ min
aspect ratio 16 : 1

InP ICP Etching for Photonic Crystals


high aspect ratio InP etch
room temperature CH4 / Cl2 process
depth 4 micron, diameter 0.56 micron
etch rate 0.5 micron/ min


ICP schematic



anisotropic mask definition
(RIE of SiN on a Plasmalab 80 Plus,
SiN deposited by PECVD
on a Plasmalab 80 Plus)


Waveguide and Resonator


Reactive Ion Etching
with ICP Source (13.56 MHz)

Inductive Coupled Plasma

13.56 MHz Plasma Excitation

RF driven substrate electrode


good uniformity: +/- 2.5 % (2“)
anisotropic profile
smooth etched sidewalls


with kind permission of
P Strasser, R Wuest, Dr F Robin
Communication Photonics Group
ETH Zurich, Switzerland
www.photonics.ee.ethz.ch

fabricated in
FIRST Lab (Dr O Homan, Dr E Gini)
ETH Zurich, Switzerland
www.first.ethz.ch

link to homepage email to OPT